Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
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在低压化学气相沉积之前使用快速热氮化制造的超薄氧化钽电容器介电层
DOI：
10.1149/1.2221612
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发表时间：
1993
影响因子：
3.9
通讯作者：
A. Ishitani
中科院分区：
文献类型：
--
作者：
S. Kamiyama;P. Lesaicherre;Hiroshi Suzuki;A. Sakai;I. Nishiyama;A. Ishitani
我们描述了形成的钽氧化物电容器，使用快速热氮化的存储节点多晶硅表面之前，低压化学气相沉积的钽氧化物。采用五乙氧基钽[Ta（OC 2 H5）5 ]和氧气（O2）混合气体，在410 ℃下，在氮化多晶硅表面沉积非晶氧化钽薄膜。薄膜在600-900 ° C的干燥氧气中退火.通过在干燥的O2中退火使沉积的膜致密化是形成高可靠性钽氧化物电容器所不可缺少的。在此致密化过程中，CH 4和H2O从沉积膜中脱附，膜结晶成正交晶结构
We describe the formation of ultrathin tantalum oxide capacitors, using rapid thermal nitridation of the storage-node polycrystalline-silicon surface prior to low pressure chemical vapor deposition of tantalum oxide. The amorphous tantalum oxide film is deposited on the nitrided polysilicon surface using penta-ethoxy-tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen (O 2 ) gas mixture at 410 o C. The films are annealed at 600-900 o C in dry O 2 . Densification of the as-deposited film by annealing in dry O 2 is indispensable to the formation of highly reliable ultrathin tantalum oxide capacitors. During this densification, CH 4 and H 2 O desorb from the as-deposited film, and the film crystallizes into an orthorhombic structure