Light induced instability mechanism in amorphous InGaZn oxide semiconductors
Light induced instability mechanism in amorphous InGaZn oxide semiconductors
复制标题
DOI：
10.1063/1.4872227
复制
发表时间：
2014-04-21
影响因子：
4
通讯作者：
Guo, Yuzheng
中科院分区：
文献类型：
--
作者：
Robertson, John;Guo, Yuzheng
基于氧间隙电子的光激发，提出了 InGaZn 氧化物中负偏压照明应力不稳定性的模型。 O间隙原子的存在是为了补偿氢供体。人们发现，在导带边缘的费米能量富氧条件下，O间隙原子会自发形成，这比在相关氧化物中更容易形成。由于复合的能垒，受激电子产生持久的光电导性。 O 间隙原子的形成能随着它们与 H 供体的分离而变化，这导致电压应力依赖于补偿。 (C) 2014 AIP 出版有限责任公司。
A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation. (C) 2014 AIP Publishing LLC.