Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
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DOI：
10.1002/aelm.202000074
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发表时间：
2020-07
影响因子：
6.2
通讯作者：
Hareesh Chandrasekar;T. Razzak;Caiyu Wang;Zeltzin Reyes;K. Majumdar;S. Rajan
中科院分区：
文献类型：
--
作者：
Hareesh Chandrasekar;T. Razzak;Caiyu Wang;Zeltzin Reyes;K. Majumdar;S. Rajan
在宽禁带AlGaN/GaN材料系统中，利用溅射BaTiO_3作为“弱”铁电栅配以传统的SiNx介质，在亚阈值区域实现了低滞后的负电容高电子迁移率晶体管(NC-HEMT)。与采用SiNx栅介质层的控制结构相比，BaTiO_3/SiN_x栅堆栈的电容有明显的提高，这直接表明了BaTiO_3铁电层的负电容贡献。与采用SiNx栅介质的标准金属-绝缘体-半导体HEMT相比，NC-HEMT的最小亚阈值斜率显著降低--97.1mV dec−1和145.6 mV dec−1--ID-VG转移曲线几乎没有滞后。这些结果有望将铁电钙钛矿氧化物与III-氮化物器件集成到低功耗的nC场效应晶体管开关中。
A negative‐capacitance high electron mobility transistor (NC‐HEMT) with low hysteresis in the subthreshold region is demonstrated in the wide bandgap AlGaN/GaN material system using sputtered BaTiO3 as a “weak” ferroelectric gate in conjunction with a conventional SiNx dielectric. An enhancement in the capacitance for BaTiO3/SiNx gate stacks is observed in comparison to control structures with SiNx gate dielectrics directly indicating the negative capacitance contribution of the ferroelectric BaTiO3 layer. A significant reduction in the minimum subthreshold slope for the NC‐HEMTs is obtained in contrast to standard metal‐insulator‐semiconductor HEMTs with SiNx gate dielectrics—97.1 mV dec−1 versus 145.6 mV dec−1—with almost no hysteresis in the ID–VG transfer curves. These results are promising for the integration of ferroelectric perovskite oxides with III‐Nitride devices toward NC‐field‐effect transistor switches with reduced power consumption.