Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)
Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)
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DOI：
10.1109/irps46558.2021.9405190
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发表时间：
2021-03
期刊：
影响因子：
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通讯作者：
Tomohiro Kuyama;K. Urabe;K. Eriguchi
中科院分区：
文献类型：
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作者：
Tomohiro Kuyama;K. Urabe;K. Eriguchi
我们提出了一种基于时间分辨阻抗 $Z(Ω, t)$ 谱时间相关阻抗谱 (TDIS) 来分析电应力下介电退化和击穿动力学的方法。 $Z(\omega, t)$ 的奈奎斯特图显示了各种介电薄膜（SiO2、SiN 和高 $k$）在软击穿和硬击穿阶段的独特特征，具体取决于电应力下缺陷产生的动态。 $Z(\omega, t)$ 谱的时间演化——$R(t)$ 和 $C(t)$——暗示了应力过程中缺陷的动态变化（电荷捕获/去捕获特征），与退化动力学一致。在高$k$电介质的击穿后阶段，观察到$Z(\omega, t)$光谱失真，这意味着存在不同的简并相。该方法也适用于评估等离子体对 SiN 薄膜造成的损伤。 TDIS 方法对于研究缺陷的电性质以及介电薄膜的降解和击穿动力学非常有用。
We propose a method to analyze the dielectric degradation and breakdown dynamics under electrical stressing on the basis of time-resolved impedance $Z(\omega, t)$ spectra-time-dependent impedance spectroscopy (TDIS). Nyquist plots of $Z(\omega, t)$ show unique features at soft- and hard-breakdown stages for various dielectric films (SiO2, SiN, and high-$k$) depending on the defect creation dynamics under electrical stressing. The time evolution of $Z(\omega, t)$ spectra— $R(t)$ and $C(t)$ —implies the dynamics of defects (charge trapping/de-trapping features) during stressing in accordance with degradation kinetics. At the post-breakdown stage of high-$k$ dielectrics, the $Z(\omega, t)$ spectra was observed to be distorted, implying the presence of different degenerated phases. This method was also applied to the evaluation of plasma-induced damage to SiN films. The TDIS method is useful for investigating the electrical nature of defects and the degradation and breakdown dynamics of dielectric films.