Fabrication of Magnetic Tunneling Junctions with NaCl Barriers
Fabrication of Magnetic Tunneling Junctions with NaCl Barriers
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DOI：
10.1143/jjap.46.6618
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发表时间：
2007-10
影响因子：
1.5
通讯作者：
M. Nakazumi;Daichi Yoshioka;H. Yanagihara;E. Kita;T. Koyano
中科院分区：
文献类型：
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作者：
M. Nakazumi;Daichi Yoshioka;H. Yanagihara;E. Kita;T. Koyano
我们利用在 Fe(001) 上生长的外延 NaCl(001) 势垒制造了磁隧道结 (MTJ)。使用真空沉积系统生长薄磁性层，并使用安装在沉积系统中的荫罩形成结图案。我们证实了 NaCl(001) 势垒层在 Fe(001) 底部电极层上外延生长，但 Fe 顶层是多晶的。 MTJ 在室温下表现出非线性电流-电压特性和~3% 的隧道磁阻 (TMR)。观察到的 TMR 比值小于具有四重对称晶体结构的外延势垒的预期值。尽管现阶段尚不清楚具有 MgO 势垒的 MTJ 与具有 NaCl 势垒的 MTJ 之间 TMR 比率存在如此大差异的原因，但碱金属卤化物族等新型材料有潜力作为 MTJ 的适用势垒。
We fabricated magnetic tunneling junctions (MTJs) with epitaxial NaCl(001) barriers grown on Fe(001). Thin magnetic layers were grown using a vacuum deposition system and junction patterns were formed using shadow masks installed in the deposition system. We confirmed that a barrier layer of NaCl(001) grows epitaxially on an Fe(001) bottom electrode layer but that the top layer of Fe is polycrystalline. The MTJs show nonlinear current–voltage characteristics and tunneling magneto-resistance (TMR) of ∼3% at room temperature. The observed TMR ratio is smaller than that expected for an epitaxial barrier with a fourfold symmetric crystal structure. Although the reason for this large discrepancy in TMR ratio between the MTJs with MgO barriers and those with NaCl barriers is unclear at this stage, novel materials such as a family of alkali halides have the potential to function as an applicable barrier for MTJs.