SiNAPS: An implantable active pixel sensor CMOS-probe for simultaneous large-scale neural recordings

SiNAPS: An implantable active pixel sensor CMOS-probe for simultaneous large-scale neural recordings
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DOI:
10.1016/j.bios.2018.10.032
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发表时间:
2019-02-01
影响因子:
12.6
通讯作者:
Berdondini, Luca
Berdondini, Luca
中科院分区:
工程技术1区
文献类型:
--
作者:
Angotzi, Gian Nicola;Boi, Fabio;Berdondini, Luca

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具有高空间和时间精度的大规模神经记录有助于理解大脑的工作原理。为此,开发可以方便地扩展到大量记录通道的探针至关重要。尽管最近在互补金属氧化物半导体(CMOS)多电极阵列探针方面取得了成就,但在当前电路架构中,同时记录通道数量的增加将显着增加芯片总面积。解决这一缩放问题的一种有前途的方法是使用模块化有源像素传感器(APS)概念,其中每个电极下方都有一个小型前端电路。然而,这种方法对像素内电路的面积、功耗和噪声施加了挑战性的限制。在这里,我们提出了一种用于同时神经记录的 APS CMOS 探针技术,该技术成功解决了从多达 1024 个电极像素以 25 kHz/通道进行全阵列读出的所有这些问题。为了评估电路性能,我们在 0.18 μm CMOS 技术中实现了一种植入式单轴探针,该探针具有 512 个电极像素的规则阵列,间距为 28 μm。广泛的基准测试显示,像素内增益为 45.4 +/- 0.4 dB(低通,F-3 db = 4 kHz),输入参考噪声为 73 +/- 0.67 mu V-RMS(300 Hz 至 7.5 kHz),功耗 < 6 mu W/像素。体内急性记录表明,我们的 SiNAPS CMOS 探针可以从每个电极采样全带生物电信号,能够在空间和时间尺度上解析和区分多个密集神经元的活动。这些结果为新一代紧凑且可扩展的主动单/多轴脑记录系统铺平了道路。
Large-scale neural recordings with high spatial and temporal accuracy are instrumental to understand how the brain works. To this end, it is of key importance to develop probes that can be conveniently scaled up to a high number of recording channels. Despite recent achievements in complementary metal-oxide semiconductor (CMOS) multi-electrode arrays probes, in current circuit architectures an increase in the number of simultaneously recording channels would significantly increase the total chip area. A promising approach for overcoming this scaling issue consists in the use of the modular Active Pixel Sensor (APS) concept, in which a small front-end circuit is located beneath each electrode. However, this approach imposes challenging constraints on the area of the in-pixel circuit, power consumption and noise. Here, we present an APS CMOS-probe technology for Simultaneous Neural recording that successfully addresses all these issues for whole-array read-outs at 25 kHz/channel from up to 1024 electrode-pixels. To assess the circuit performances, we realized in a 0.18 mu m CMOS technology an implantable single-shaft probe with a regular array of 512 electrode-pixels with a pitch of 28 mu m. Extensive bench tests showed an in-pixel gain of 45.4 +/- 0.4 dB (low pass, F-3 db = 4 kHz), an input referred noise of 73 +/- 0.67 mu V-RMS (300 Hz to 7.5 kHz) and a power consumption < 6 mu W/pixel. In vivo acute recordings demonstrate that our SiNAPS CMOS-probe can sample full-band bioelectrical signals from each electrode, with the ability to resolve and discriminate activity from several packed neurons both at the spatial and temporal scale. These results pave the way to new generations of compact and scalable active single/multi-shaft brain recording systems.