MMIC packaging and on-chip low-loss lateral interconnection using additive manufacturing and laser machining
MMIC packaging and on-chip low-loss lateral interconnection using additive manufacturing and laser machining
复制标题
使用增材制造和激光加工的 MMIC 封装和片上低损耗横向互连
DOI：
10.1109/mwsym.2017.8058582
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Weller
中科院分区：
文献类型：
--
作者：
Ramiro A. Ramirez;Di Lan;Jing Wang;T. Weller
本文展示了一种新的、通用的用于微波和毫米波系统的3D打印片上集成方法。集成过程将互连从MMIC横向扩展到芯片载体。为了提高3D打印质量，对激光加工技术进行了研究和表征。具体来说，微点印刷走线的宽度精确控制在微米范围内，并通过激光切割形成探针垫，以方便射频测量。对集成在封装中的分布式放大器在2 ~ 30 GHz范围内的s参数进行了仿真和测量。整体性能明显优于传统的线键QFN封装。包括互连在内的微带线在20 GHz时的衰减仅为0.2 dB/mm，并且在整个工作频带内封装的回波损耗小于10 dB。
A new and versatile 3D printed on-chip integration approach using laser machining is demonstrated in this paper for microwave and mm-wave systems. The integration process extends interconnects laterally from a MMIC to a chip carrier. Laser machining techniques are studied and characterized to enhance the 3D printing quality. Specifically, the width of microdispensed printed traces is accurately controlled within micrometer range and probe pads are formed by laser cutting to facilitate RF measurement. S-parameters of a distributed amplifier integrated into the package are simulated and measured from 2 to 30 GHz. The overall performance is significantly better than traditional wirebonded QFN package. The attenuation of the microstrip line including interconnects is only 0.2 dB/mm at 20 GHz and return loss with the package is less than 10 dB through-out the operating frequency band.