Effect of disorder on the resistivity anisotropy near the electronic nematic phase transition in pure and electron-doped BaFe(2)As(2).
Effect of disorder on the resistivity anisotropy near the electronic nematic phase transition in pure and electron-doped BaFe(2)As(2).
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DOI：
10.1103/physrevlett.112.227001
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发表时间：
2013-11
影响因子：
8.6
通讯作者：
H. Kuo;I. Fisher
中科院分区：
文献类型：
--
作者：
H. Kuo;I. Fisher
我们发现，代表性的欠掺杂砷化铁 BaFe_{2}As_{2}、Ba(Fe_{1-x}Co_{x})_{2}As_{2} 和 Ba(Fe_{1-x}Ni_{x})_{2}As_{2} 在四方晶态下应变引起的电阻率各向异性在广泛的缺陷和杂质浓度范围内与无序无关。该结果表明，该材料的顺磁斜方晶态面内电阻率的各向异性不是由于各向异性缺陷的弹性散射造成的。相反，如果电阻率各向异性主要来自电子结构中的固有各向异性，那么我们的结果就很容易理解。
We show that the strain-induced resistivity anisotropy in the tetragonal state of the representative underdoped Fe arsenides BaFe_{2}As_{2}, Ba(Fe_{1-x}Co_{x})_{2}As_{2} and Ba(Fe_{1-x}Ni_{x})_{2}As_{2} is independent of disorder over a wide range of defect and impurity concentrations. This result demonstrates that the anisotropy in the in-plane resistivity in the paramagnetic orthorhombic state of this material is not due to elastic scattering from anisotropic defects. Conversely, our result can be most easily understood if the resistivity anisotropy arises primarily from an intrinsic anisotropy in the electronic structure.