Formation of Silicon-on-Nothing Structures with Extremely Flat Surfaces
Formation of Silicon-on-Nothing Structures with Extremely Flat Surfaces
复制标题
DOI：
10.7567/jjap.52.075601
复制
发表时间：
2013-07-01
影响因子：
1.5
通讯作者：
Maenaka, Kazusuke
中科院分区：
文献类型：
--
作者：
Sudoh, Koichi;Nakamura, Jun;Maenaka, Kazusuke
我们研究了通过高温退火在Si（001）表面上制造的高深宽比孔阵列来产生具有极平坦表面的无硅（SON）结构的退火条件。在通过高温退火引起的表面扩散驱动演化形成SON结构之后的阶段中，SON表面是粗糙的。我们表明，额外的退火后的SON结构形成在高温下，其中从步骤边缘发生的优先升华，有效地去除表面粗糙度，以产生SON结构与非常平坦的（001）表面，具有相当低的步骤密度。(C)2013日本应用物理学会
We have investigated annealing conditions for producing silicon-on-nothing (SON) structures with extremely flat surfaces by high temperature annealing of high-aspect-ratio hole arrays fabricated on Si(001) surfaces. In the phase immediately after SON structures are formed through the surface-diffusion driven evolution induced by high temperature annealing, the SON surfaces are rough. We show that additional annealing after the SON structure formation at high temperatures, where preferential sublimation from step edges occurs, effectively removes the surface roughness to yield SON structures with extremely flat (001) surfaces with fairly low step densities. (C) 2013 The Japan Society of Applied Physics