A Scalable High-Voltage Output Driver for Low-Voltage CMOS Technologies
A Scalable High-Voltage Output Driver for Low-Voltage CMOS Technologies
复制标题
适用于低压 CMOS 技术的可扩展高压输出驱动器
DOI：
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发表时间：
2006
影响因子：
2.8
通讯作者：
T. Windley
中科院分区：
文献类型：
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作者：
E. J. Mentze;H. Hess;K. Buck;T. Windley
提出了一种用于高压开关应用的串联MOSFET的单片实现。使用单个低电压控制信号来触发串联堆栈中的底部MOSFET，使用电路中的寄生电容和插入电容的分压来打开整个器件堆栈。这种电压划分在整个开关周期内静态和动态地保护各个MOSFET。由于在整个开关周期内，输出电压在堆叠中的每个器件之间是平衡的，因此即使在发生瞬时过电压的情况下，对氧化物的压力和热载流子退化也是最小的。这种称为堆叠式MOSFET的电路是n倍可扩展的，允许片上控制额定工作电压的制造工艺的n倍电压。推导了该电路的控制方程，并通过模拟和实验验证了该电路在0.35微米SOI工艺下的可靠工作。所实现的样机在20 MHz的开关频率下处理额定工艺工作电压的2倍，输入输出延迟仅为5.5 ns
A monolithic implementation of series connected MOSFETs for high-voltage switching applications is presented. Using a single low-voltage control signal to trigger the bottom MOSFET in the series stack, a voltage division across parasitic and inserted capacitances in the circuit is used to turn on the entire stack of devices. This voltage division both statically and dynamically safeguards the individual MOSFETs over the entire switching period. Because the output voltage is balanced across each device in the stack for the entire switching period, stress to the oxide and hot-carrier degradation are minimized, even in the event of transient over voltages. This circuit, termed the Stacked MOSFET, is ntimes scalable, allowing for the on-die control of voltages that are ntimes the fabrication processes rated operating voltage. The governing equations for this circuit are derived and reliable operation is demonstrated through simulation and experimental implementation in a 0.35-mum SOI CMOS process. The realized prototype is shown to handle 2times the nominal process operating voltage at a switching frequency of 20 MHz with an input-to-output delay of only 5.5 ns