Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
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DOI：
10.1021/nn2025786
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发表时间：
2011-09-01
期刊：
影响因子：
17.1
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Hong, Young Joon;Fukui, Takashi
我们报道了非常规的，非共价异质外延垂直砷化铟（InAs）纳米线在薄石墨薄膜的货车德瓦尔斯（VDW）的相互作用。在石墨衬底上外延形成垂直的In As纳米线时，In As与石墨表面的面内晶格匹配（失配度为0.49%）起着至关重要的作用。否则，。砷化镓（~ 6.22%的失配）生长为Le岛形态。横截面透射电子显微镜分析表明，1-2个单分子层的凸台或扭结促进非润湿石墨表面上的InAs的异质成核，形成nudei和促进随后的纳米线生长与强VOW相互作用的异质结。我们进一步展示了利用衬底表面刻蚀和图案化技术在蜂窝状碳表面上获得高产率和均匀InAs纳米线阵列的受控VDW外延方法。我们的工作为III-砷化物/石墨烯混合结电子学和光电子学开辟了一个新的平台。
We report on unconventional, noncovalent heteroepitaxy of vertical indium arsenide (InAs) nanowires on thin graphitic films in terms of van der Waals (VDW) interactions. Nearly coherent In-plane lattice matching (misfit of 0.49%) between In As and the graphitic surface plays a critical role in the epitaxial formation of vertical In As nanowires on graphitic substrates. Otherwise,. gallium arsenide (misfit of -6.22%) is grown to Le island morphologies. Cross-sectional transmission electron microscopy analyses show that 1-2 monomolecular layer ledges or kinks facilitate heterogeneous nucleation of InAs on nonwetting graphitic surfaces, forming the nudei and promoting the subsequent nanowire growth with strong VOW interactions at the heterojunction. We further demonstrate the controlled VDW epitaxy method for high-yield and uniform InAs nanowire arrays on honeycomb carbon surface utilizing substrate surface etching and patterning techniques Our work opens a new platform for the III-arsenide/graphene hybrid junction electronics and optoelectronics.