Direct Electrodeposition of Thin Metal Films on Functionalized Dielectric Layer and Hydrogen Gas Sensor
Direct Electrodeposition of Thin Metal Films on Functionalized Dielectric Layer and Hydrogen Gas Sensor
复制标题
DOI：
10.1149/2.0061702jes
复制
发表时间：
2017-01-01
影响因子：
3.9
通讯作者：
Chung, T. D.
中科院分区：
文献类型：
--
作者：
Lee, J. -Y.;Shin, S. J.;Chung, T. D.
利用阴极氢原子产生，金属如Pt、Pd、Cu、Au和Ni直接电沉积在通过c-Si衬底的热氧化形成的6 nm厚的氧化硅的功能化介电层上。通过简单的湿化学方法，用功能分子和Au纳米粒子修饰氧化层，可以有效地增强电沉积，从而修饰Pd和Pt的纳米粒子，获得这样的金属薄膜。特别地，胺改性的氧化硅上的Au纳米颗粒显著增强金属纳米颗粒的电沉积，以在介电层n（+）-Si/SiO2-NH 2上产生坚固的金属膜。这种增强归因于Au纳米颗粒与电沉积金属的良好亲和力以及穿过氧化硅的增强的电流密度。作为潜在应用的一个例子，我们展示了在电介质层上一步电沉积Pd膜来制造电导式氢气传感器而不转移Pd膜。(C)作者（S）2016由ECS发布。All rights reserved.
Harnessing cathodic hydrogen atom generation, metals such as Pt, Pd, Cu, Au and Ni are directly electrodeposited on functionalized dielectric layers of 6 nm thick silicon oxide formed by thermal oxidation of c-Si substrate. Modifying the oxide layer with functional molecules and Au nanoparticles by simple wet chemistry, we can enhance electrodeposition efficiently and thereby electroplate nanoparticles of Pd and Pt to obtain such thin metal films. In particular, Au nanoparticles on amine-modified silicon oxides remarkably enhance electrodeposition of metal nanoparticles to create sturdy metal films on the dielectric layer, n(+)-Si/SiO2-NH2. Such enhancement is ascribed to good affinity of Au nanoparticles with electrodeposited metal as well as enhanced current density across the silicon oxide. For an example of potential applications, we show one-step electrodeposition Pd film on dielectric layers to fabricate conductometric hydrogen gas sensor without transferring Pd film. (C) The Author(s) 2016. Published by ECS. All rights reserved.