Effects of Measurement Temperature on NBTI
Effects of Measurement Temperature on NBTI
复制标题
测量温度对 NBTI 的影响
DOI：
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复制
发表时间：
2007
影响因子：
4.9
通讯作者：
G. Groeseneken
中科院分区：
文献类型：
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作者：
J. Zhang;M. Chang;G. Groeseneken
负偏置温度不稳定性（NBTI）是CMOS工业中一个紧迫的可靠性问题。在最近的工作中，NBTI是在应力温度下测量的。这封信将首次证明，对于给定数量的缺陷，在应力温度下测量的阈值电压漂移可能小于室温下其值的一半。因此，在不同测量温度下获得的数据不应用于提取缺陷产生的热增强。将来，在估计pMOSFET的NBTI有限寿命时，应考虑到这种新发现的对测量温度的依赖性
Negative bias temperature instability (NBTI) is a pressing reliability issue for the CMOS industry. NBTI has been measured at stress temperature in most of the recent works. For the first time, this letter will demonstrate that, for a given number of defects, the threshold-voltage shift measured at stress temperature can be less than half of its value at room temperature. As a result, the data obtained at different measurement temperatures should not be used for extracting the thermal enhancement of defect creation. In the future, this newly identified dependence on measurement temperature should be taken into account when estimating the NBTI limited lifetime of pMOSFETs