High thermoelectric efficiency in lanthanum doped Yb14MnSb11
High thermoelectric efficiency in lanthanum doped Yb14MnSb11
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DOI：
10.1063/1.2970089
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发表时间：
2008-08
影响因子：
4
通讯作者：
E. Toberer;S. Brown;T. Ikeda;S. Kauzlarich;G. J. Snyder
中科院分区：
文献类型：
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作者：
E. Toberer;S. Brown;T. Ikeda;S. Kauzlarich;G. J. Snyder
La掺杂高温p型热电材料Yb_(14)MnSb_(11)通过载流子浓度可调来提高fi优值曲线ZT。这是通过取代Yb^(2+)位上的La^(3+)来降低自由空穴浓度来实现的，这与价态的变化不谋而合。Yb_(13.6)La_(0.4)MnSb_(11)的高温输运性质(塞贝克系数、电阻率、霍尔迁移率和热导率)可以用一个简单的刚性抛物线能带模型来解释，该模型与Yb_(14)Mn_(1−x)A_(Lx)Sb_(11)类似。这两个掺杂位的使用使得Yb_(14)MnSb_(11)基材料的电子性质和结构性质部分解耦。
Lanthanum doping of the high-temperature p-type thermoelectric material Yb_(14)MnSb_(11) enhances the figure of merit zT through carrier concentration tuning. This is achieved by substituting La^(3+) on the Yb^(2+) site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb_(13.6)La_(0.4)MnSb_(11) are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb_(14)Mn_(1−x)A_(lx)Sb_(11). Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb_(14)MnSb_(11)-based materials.