Retention behavior of hydrogen isotopes in boron film deposited on SS-316 for LHD first wall
Retention behavior of hydrogen isotopes in boron film deposited on SS-316 for LHD first wall
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DOI：
10.1016/j.fusengdes.2010.09.021
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发表时间：
2010-12
影响因子：
1.7
通讯作者：
K. Okuno;Sachiko Suzuki;Makoto Kobayashi;Rie Kurata;M. Masao;N. Ashikawa;A. Sagara;Y. Oya
中科院分区：
文献类型：
--
作者：
K. Okuno;Sachiko Suzuki;Makoto Kobayashi;Rie Kurata;M. Masao;N. Ashikawa;A. Sagara;Y. Oya
用XPS和TDS研究了含氧52%的316不锈钢作为LHD第一壁沉积硼膜的化学状态和氘潴留。硼膜中的高氧浓度可归因于不锈钢表面氧化层中的氧。当氧浓度为52%时，硼的主要化学态为B2O3。在高能氘辐照下，b2o3结构分解为B-B和B-O键。发现在LHD第一壁的操作温度下，氘可以留在硼膜中。氧浓度为36%时，SS上沉积的硼膜中氘的滞留量小于硅上沉积的硼膜。随着硼膜中氧浓度的增加，溅射氧的数量明显增加，说明与注入的氘发生反应并释放出更多的重水，导致硼膜中保留的氘更少。LHD的D-D排放需要了解在操作温度下硼膜中不能去除的氚潴留和氚化水的释放。
The chemical states and the deuterium retention of boron films deposited on type 316 stainless steel used as first wall of LHD, which contained 52% oxygen, were studied by means of XPS and TDS. The high oxygen concentration in the boron film could be attributed to oxygen in the surface oxide layer of the stainless steel. The major chemical state of boron with 52% oxygen concentration was B2O3. The B2O3structure was decomposed to B–B and B–O bonds by the energetic deuterium irradiation. It was found that the deuterium could remain in boron films under operation temperature in the first wall of LHD. The deuterium retention in the boron film deposited on SS was smaller compared to that in the boron film deposited on silicon substrate with 36% oxygen concentration. As the oxygen concentration in boron films increased, the amount of sputtered oxygen was clearly increased, indicating that more heavy water was formed by reacting with implanted deuterium and released, resulting in the smaller deuterium retention in the boron films. The knowledge for the tritium retention in boron films which cannot remove in the operation temperature and the release of tritiated water should be required for the D–D discharge in LHD.