Work functions of thin LaB6 films
Work functions of thin LaB6 films
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DOI：
10.1016/0169-4332(93)90612-f
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发表时间：
1993-06
影响因子：
6.7
通讯作者：
A. Yutani;A. Kobayashi;A. Kinbara
中科院分区：
文献类型：
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作者：
A. Yutani;A. Kobayashi;A. Kinbara
采用真空电子束沉积法在高温下制备了LaB 6薄膜，并在1100 K下退火60 min对其进行了稳定化处理。在300，750和1000 K下制备的膜的功函数具有2.7-2.8 eV的值。还测量了在750 K下在倾斜衬底（与法线方向成45°和80°）上形成的膜的功函数，并且它们的值为1.27eV。X射线衍射峰位表明，随着衬底倾角的增大，薄膜中的应力由拉伸变为压缩，在45°时，应力几乎为零。结果表明，衬底温度和薄膜应变对薄膜的功函数影响不大。
LaB6thin films were prepared at elevated temperatures by electron beam deposition in vacuum and were stabilized by annealing at 1100 K for 60 min. Their electron emission characteristics were investigated by the thermionic emission method. The work functions of the films fabricated at 300, 750 and 1000 K had values of 2.7–2.8 eV. The work functions of the films formed on tilted substrates (45° and 80° to the normal direction) at 750 K were also measured, and they had values of ∼ 2.7 eV. X-ray diffraction peak positions showed that stress in the films changes from tensile to compressive with increasing substrate tilt angle, and at 45° it is nearly zero. It is found that substrate temperature and film strain have little influence on the work function.