Segregation Phenomena at Thermally Grown Al 2 O 3 /Alloy Interfaces
Segregation Phenomena at Thermally Grown Al 2 O 3 /Alloy Interfaces
复制标题
DOI：
10.1146/annurev.matsci.38.060407.130323
复制
发表时间：
2008-07
影响因子：
9.7
通讯作者：
P. Hou
中科院分区：
文献类型：
--
作者：
P. Hou
综述了二元FeAl、NiAl合金和添加Cr、Pt或Zr、Hf、Y等活性元素的三元合金中S在Al 2 O3/合金界面上的偏析实验结果。偏析行为本质上是热力学行为，但偏析能不仅随合金元素而变化，而且随氧化时间和氧化温度而变化。虽然活性元素能够消除界面S偏析，但它们不能阻止这种偏析到合金表面。反应性元素在界面处的偏聚进一步增强了界面结合。可能发生S和Cr的共偏析，导致界面处的S水平较高。Pt通常抑制S偏析，但这种作用可以很容易地被S-Cr共偏析所压倒。合金元素之间的协同作用以及它们如何影响偏析，以及偏析和氧化过程之间的关系，是需要进一步研究的领域。
Experimental results on S segregation at growing Al2O3/alloy interfaces are reviewed for binary FeAl, NiAl alloys, and ternary alloys with additions of Cr, Pt, or a reactive element, such as Zr, Hf, or Y. The segregation behavior is thermodynamic in nature, but the segregation energy can change not only with alloying elements but also with oxidation time and temperature as the oxide growth process changes. Although reactive elements are capable of eliminating interfacial S segregation, they do not stop such segregation to alloy surfaces. The segregation of a reactive element at the interface further strengthens the interfacial bonding. Cosegregation of S and Cr can occur, resulting in higher levels of S at the interface. Pt usually suppresses S segregation, but this effect can be easily overwhelmed by S-Cr cosegregation. Synergisms between alloying elements and how they affect segregation, as well as the relationship between segregation and the oxidation process, are areas that demand further investigation.