Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam
Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam
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DOI：
10.1109/tns.2015.2392851
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发表时间：
2015-03
影响因子：
1.8
通讯作者：
Chulseung Lim;H. Jeong;Geunyong Bak;S. Baeg;S. Wen;R. Wong
中科院分区：
文献类型：
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作者：
Chulseung Lim;H. Jeong;Geunyong Bak;S. Baeg;S. Wen;R. Wong
这项工作分享了 3x 纳米技术的 DDR3 组件中质子束对卡住位的观察结果。四大 DRAM 制造商的 DDR3 SDRAM 在 800 MHz 的工作频率下使用 45 MeV 质子束进行了测试。由于微剂量和位移损坏效应，光束曝光导致单比特翻转 (SBU) 和多比特翻转 (MBU)，以及一个字中的单个和多个卡住比特。随着刷新间隔持续时间的缩短，卡住位的数量也会减少。此外，测试样品经过150℃退火后，卡住的钻头完全恢复，可以正常运行。一个字中出现多个卡住位很可能是由于控制逻辑损坏造成的，这些卡住位在 150°C 退火后也恢复了。
This work shares the observations of stuck bits by proton beam in DDR3 components in 3x-nm technologies. The DDR3 SDRAMs from four major DRAM manufacturers were tested with a 45-MeV proton beam at an operating frequency of 800 MHz. The beam exposure resulted in single bit upset (SBU) and multiple bit upsets (MBUs), as well as single and multiple stuck bits in a word due to micro-dose and displacement damage effects. The number of stuck bits reduced as the refresh interval duration was decreased. Moreover, for the tested samples, the stuck bits were recovered completely and could be run in the normal operation mode after annealing at 150°C. The occurrence of multiple stuck bits in a word was likely due to damages to the control logic and those stuck bits were recovered as well after annealing at 150°C.