Hydroxide catalysis bonding of silicon carbide
Hydroxide catalysis bonding of silicon carbide
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DOI：
10.1016/j.jeurceramsoc.2007.06.002
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发表时间：
2008-01-01
影响因子：
5.7
通讯作者：
Nijmeijer, H.
中科院分区：
文献类型：
--
作者：
van Veggel, A. A.;van den Ende, D.;Nijmeijer, H.
对于需要极高稳定性的碳化硅光学元件的粘接，氢氧化物催化粘接被认为是[Rowan，S.，Hough，J.和Elliffe，E.，碳化硅粘接。英国专利7953.9,2004年。欲了解更多信息，请联系D.Whiteford先生：D.Whiteford@admin.gl.ac.uk。这项技术已经被用于粘合硅酸盐材料，如熔融二氧化硅和零度。在碳化硅的应用中，这项技术是高度实验性的，目的是测试与碳化硅的结合强度。碳化硅被抛光到波长/10PV的平坦度，然后在1100摄氏度的潮湿环境中被氧化，然后在粘合之前在表面形成必要的二氧化硅层。粘接是在无尘室条件下进行的。粘合后，将这些碎片锯成棒子，以在四点弯曲实验中确定强度。氧化过程显示出许多不同的颜色变化，表明氧化过程的厚度变化和污染。成功地进行了粘合。然而，这些粘结剂不能抵抗锯切过程中使用的含水冷却液。几根棒材在锯切过程中幸存下来，最大强度已测量到30N mm(-2)。(C)2007爱思唯尔有限公司。保留所有权利。
For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This technique is already used for bonding silicate-based materials, like fused silica and Zerodur. In application with silicon carbide, the technique is highly experimental and the aim is to test the strength of the bond with silicon carbide. The silicon carbide is polished to lambda/10 PV flatness and then oxidized at 1100 degrees C in a wet environment prior to bonding to form a necessary layer Of SiO2 on the surface. The bonding is performed in clean room conditions. After bonding the pieces are sawed into bars to determine the strength in a four-point bending experiment. The oxidization process shows many different color changes indicating thickness variations and contamination of the oxidization process. The bonding has been performed with success. However, these bonds are not resistant against aqueous cooling fluids, which are used during sawing. Several bars have survived the sawing and a maximum strength of 30 N mm(-2) has been measured. (c) 2007 Elsevier Ltd. All rights reserved.