Low Threshold Strained Quantum Well Lasers at 1.5 Micron Wavelength
Low Threshold Strained Quantum Well Lasers at 1.5 Micron Wavelength
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1.5 微米波长的低阈值应变量子阱激光器
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
M. Chien
中科院分区：
文献类型：
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作者：
U. Koren;M. Oron;M. Young;B. Miller;J. L. de Miguel;G. Raybon;M. Chien
波长为1.3-1.5微米的InGaAs/InGaAsP多量子阱（MQW）激光器在该波长范围内具有优于体激光器的几个优点，例如低内部损耗、高量子效率、低阈值电流操作和小线宽增强因子[1-3]。已经有几个报告预测，通过采用应变层量子威尔斯[4，5]，进一步的改进是可能的，因为量子阱层的重空穴子带中的空穴的有效质量可以通过压缩应变在威尔斯的平面中显著减小。这将导致较低的阈值电流和激光器参数的其他改进。最近，报道了InGaAs /InGaAsP应变层MQW激光器在1.5微米处的工作[6]，其效率和输出功率与先前报道的无应变MQW激光器的高值相似。然而，没有观察到阈值电流和线宽增强因子的预期降低。
InGaAs/InGaAsP multiple quantum well (MQW) lasers at 1.3-1.5 micron wavelength have yielded several advantages over bulk lasers at this wavelength range, such as low internal loss , high quantum efficiency, low threshold current operation and small linewidth enhancement factors [1-3]. There have been several reports predicting that further improvements are possible by employing strained layer quantum wells [4,5], as the effective mass of holes in the heavy hole sub-band of quantum well layers can be significantly reduced in the plane of the wells by compressive strain. This should result in lower threshold currents and other improvements of the laser parameters. Recently, the operation of InGaAs /InGaAsP strained layer MQW lasers at 1.5 micron was reported [6] with efficiency and output powers similar to the high values reported previously for unstrained MQW lasers. However, the expected reduction in threshold current and linewidth enhancement factor have not been observed.