Timing performance comparison of P-on-N and N-on-P silicon photomultipliers
Timing performance comparison of P-on-N and N-on-P silicon photomultipliers
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P-on-N 和 N-on-P 硅光电倍增管的时序性能比较
DOI：
10.1109/nssmic.2012.6551487
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
C. Levin
中科院分区：
文献类型：
--
作者：
R. Vinke;J. Yeom;M. Mazzillo;D. Sanfilippo;A. Piana;C. Levin
我们研究了P-on-N和N-on-P硅光电倍增管（SiPM）在飞行时间（TOF）正电子发射断层扫描（PET）探测器中的定时性能。抛光的3 mm × 3 mm × 5 mm和3 mm × 3 mm × 20 mm LYSO：Ce晶体管与STmicroelectronics P-on-N和N-on-P SiPM耦合。SiPM用低噪声RF跨导放大器读出，并馈送到波形数字化仪进行离线时间拾取分析。在3 mm × 3 mm × 20 mm和3 mm × 3 mm × 5 mm晶体上，P-on-N器件的符合分辨时间（CRT）分别为234 ps和189 ps。对于非P型器件，用上述晶体类型分别获得了280 ps和214 ps半高宽的CRT。P-on-N器件由于其高的光子探测效率（PDE）和低的渡越时间扩展（TTS）而具有用于TOF-PET的前景。
We have investigated the timing performance of P-on-N and N-on-P silicon photomultipliers (SiPM) in light of their use in time-of-flight (TOF) positron emission tomography (PET) detectors. Polished 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm LYSO:Ce scintillators were coupled to STmicroelectronics P-on-N and N-on-P SiPMs. The SiPMs were read out with low-noise RF transimpedance amplifiers and fed to a waveform digitizer for offline time pickoff analysis. For the P-on-N devices coincidence resolving times (CRTs) of 234 ps and 189 ps FWHM were obtained with the 3 mm × 3 mm × 20 mm and 3 mm × 3 mm × 5 mm crystals, respectively. For the Non-P devices CRTs of 280 ps and 214 ps FWHM, respectively, were obtained with above crystal types. The P-on-N devices are promising for TOF-PET due to their high photon detection efficiency (PDE) and low transit time spread (TTS).