Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors
Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors
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AlGaN/GaN异质结构场效应晶体管饱和区漏极接入电阻的研究
DOI：
10.1109/ted.2022.3159283
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发表时间：
2022-05
影响因子：
3.1
通讯作者：
Bin Liu
中科院分区：
文献类型：
--
作者：
Ming Yang;Zhiliang Gao;Xinguang Su;Yuanyuan Wang;Yanhui Han;Xu Tang;Ben Li;Jihao He;Jun Liu;Ruojue Wang;Xiao Liu;Fei Mei;Lei Wang;Li Zhou;Wei Song;Yingqian Liu;Fayu Wan;Zhengang Cui;Bin Liu
提出了一种确定AlGaN/GaN异质结场效应晶体管(HFET)饱和区漏极访问电阻的方法。定性和定量地分析了漏极接入电阻的变化。与来源进行比较
A method is proposed to determine drain access resistance in saturation region of AlGaN/GaN heterostructure field-effect transistors (HFETs). The variation of drain access resistance is analyzed qualitatively and quantificationally. Comparing with source