Sputter deposition and characterization of Mn3CuN thin films
Sputter deposition and characterization of Mn3CuN thin films
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DOI：
10.1016/j.jallcom.2011.12.110
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发表时间：
2013-11-15
影响因子：
6.2
通讯作者：
Ikuta, Hiroshi
中科院分区：
文献类型：
--
作者：
Aoyama, Masahiro;Takenaka, Koshi;Ikuta, Hiroshi
对一种新发现的铁磁性形状记忆合金--反钙钛矿锰化物Mn3CuN进行了磁控反应溅射制备薄膜的系统研究。我们在YSZ衬底上获得了(111)取向的薄膜，其铁磁转变温度类似于化学计量比的块体样品。另一方面，在缺氮的情况下，在氧化镁衬底上可以得到(100)取向的薄膜。为了减少氮素缺乏，对溅射参数与氮素缺乏的关系进行了深入的研究。测量了Mn3CuN0.86薄膜的磁化强度，发现其磁各向异性与材料的磁致伸缩行为相一致。(C)2011爱思唯尔B.V.保留所有权利。
A systematic study on thin film preparation by means of reactive magnetron sputtering was carried out for an antiperovskite manganese compound Mn3CuN, a recently discovered ferromagnetic shape-memory alloy. We obtained a (1 1 1) oriented thin film that possesses a ferromagnetic transition temperature similar to stoichiometric bulk samples on an yttria-stabilized zirconia (YSZ) substrate. On the other hand, (1 0 0) oriented thin films were obtained on MgO substrates while the thin films were deficient in nitrogen. The correlation between the sputtering parameters and nitrogen deficiency was thoroughly investigated in order to reduce the nitrogen deficiency. The magnetization measurements of a Mn3CuN0.86 thin film revealed a magnetic anisotropy that is consistent with the behavior of magnetostriction of this material. (C) 2011 Elsevier B.V. All rights reserved.