Transport in molecular transistors: Symmetry effects and nonlinearities
Transport in molecular transistors: Symmetry effects and nonlinearities
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DOI：
10.1103/physrevb.66.033301
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发表时间：
2002-07
影响因子：
3.7
通讯作者：
S. Rashkeev;M. Ventra;S. Pantelides
中科院分区：
文献类型：
--
作者：
S. Rashkeev;M. Ventra;S. Pantelides
我们报告的第一性原理计算模型分子晶体管的电流-电压和电流-栅极-场特性，以探索控制电流放大和其他属性的因素。我们发现，共振峰的位置和振幅的修改通过使用取代基，影响分子的对称性和偶极矩，并允许线性与非线性斯塔克效应。此外，强非线性出现在大的源漏电流。
We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents.