Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition
Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition
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DOI：
10.1016/j.jallcom.2012.08.117
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发表时间：
2013-03
影响因子：
6.2
通讯作者：
H. Xiong;J. Dai;Xiong Hui;Yujiao Fang;W. Tian;D. Fu;Changpeng Chen;Mingkai Li;Yunbin He
中科院分区：
文献类型：
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作者：
H. Xiong;J. Dai;Xiong Hui;Yujiao Fang;W. Tian;D. Fu;Changpeng Chen;Mingkai Li;Yunbin He
本文采用脉冲激光沉积（PLD）技术，在不同的c面AlN/c-蓝宝石模板上生长了高质量的ZnO薄膜，AlN缓冲层的厚度从150 nm到300 nm不等。利用高分辨X射线衍射、原子力显微镜、光致发光谱和拉曼光谱对ZnO薄膜的性质进行了研究。对比研究结果表明，插入AlN缓冲层是提高ZnO薄膜晶体质量的有效途径。此外，AlN缓冲层的厚度对ZnO薄膜的质量起着重要的作用。（0002）ω摇摆曲线的半高宽（FWHM）为0.09°，表明采用150 nm厚的AlN/c-蓝宝石模板可以获得高质量的c面ZnO薄膜。在最好的知识的作者，这是目前报道的最小值为ZnO薄膜上生长的AlN/c-蓝宝石模板PLD。
In this work, ZnO films with high crystal quality were grown by pulsed laser deposition (PLD) on different c-plane AlN/c-sapphire template thereby the thicknesses of AlN buffer layers varied from 150 to 300nm. The properties of ZnO thin films were studied by using high-resolution X-ray diffraction, atomic force microscopy, photoluminescence spectroscopy, and Raman measurement. The comparative investigation results show that inserting an AlN buffer layer is an effective way to improve the crystal quality of ZnO films. Furthermore, the thickness of the AlN buffer layer plays an important role on the quality of ZnO films. The result of (0002) ω-rocking curve with the full width at half maximum (FWHM) of 0.09° indicates that high-quality c-plane ZnO films can be achieved by using a 150nm-thickness AlN/c-sapphire template. In the best knowledge of the authors, this is the minimum value reported at present for ZnO films grown on AlN/c-sapphire templates by PLD.