Molecular Coulomb islands for single-electron tunneling in SiO2/molecular layer/SiO2 multilayers on Si(100)
Molecular Coulomb islands for single-electron tunneling in SiO2/molecular layer/SiO2 multilayers on Si(100)
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Si(100) 上 SiO2/分子层/SiO2 多层膜中单电子隧道效应的分子库仑岛
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
S. Mashiko
中科院分区：
文献类型：
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作者：
Y. Wakayama;T. Kubota;Hitoshi Suzuki;T. Kamikado;S. Mashiko
我们通过使用嵌入在金属氧化物半导体结构中的有机分子作为库仑岛来证明库仑阻塞现象。在Si（100）衬底上的SiO2/富勒烯（C60）/SiO2多层膜结构中，观察到电流-电压（I-V）曲线的阶梯状变化。I-V曲线中的阶梯可归因于库仑阻塞。富勒烯充当库仑岛，SiO2层充当隧穿势垒。包含卟啉衍生物的相同多层结构在I-V曲线中也表现出类似的阶梯。这些结果揭示了分子作为单电子隧穿器件的库仑岛的潜力。
We demonstrate the Coulomb blockade phenomenon by using organic molecules as Coulomb islands embedded in a metal–oxide–semiconductor structure. Staircases in current–voltage (I–V) curves are observed in an SiO2/fullerene(C60)/SiO2 multilayered structure on Si (100) substrates. The staircases in the I–V curves can be attributed to the Coulomb blockade. The fullerenes serve as Coulomb islands and the SiO2 layers serve as tunneling barriers. The same multilayered structure that includes a porphyrin derivative also exhibits similar staircases in an I–V curve. These results reveal the potential of molecules to act as Coulomb islands of single-electron tunneling devices.