Silver Deposition onto Modified Silicon Substrates.
Silver Deposition onto Modified Silicon Substrates.
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DOI：
10.1021/acs.jpcc.6b12896
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发表时间：
2017-04-06
期刊：
影响因子：
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通讯作者：
Teplyakov AV
中科院分区：
文献类型：
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作者：
Duan Y;Rani S;Zhang Y;Ni C;Newberg JT;Teplyakov AV
使用三甲基膦（六氟乙酰丙酮）银（I）作为前体将银沉积到硅表面上。在包括二氧化硅、H封端的Si（100）和OH封端的（氧化的）Si（100）的硅基衬底上进行沉积。比较了室温和高温（350 °C）下的沉积过程。通过原子力显微镜（AFM）和扫描电子显微镜（SEM）证实，成功的沉积导致纳米结构或纳米结构的膜，其中金属银是通过X射线光电子能谱（XPS）证实的主要沉积物质。前体的反应性不仅取决于工艺的温度，还取决于衬底的类型。密度泛函理论（DFT）被用来解释这些差异，并提出了初始沉积步骤的机制。
Trimethylphosphine(hexafluoroacetylacetonato)silver(I) was used as a precursor to deposit silver onto silicon surfaces. The deposition was performed on silicon-based substrates including silica, H-terminated Si(100), and OH-terminated (oxidized) Si(100). The deposition processes at room temperature and elevated temperature (350 °C) were compared. The successful deposition resulted in nanostructures or nanostructured films as confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM) with metallic silver being the majority deposited species as confirmed by X-ray photoelectron spectroscopy (XPS). The reactivity of the precursor depends drastically not only on the temperature of the process but also on the type of substrate. Density functional theory (DFT) was used to explain these differences and to propose the mechanisms for the initial deposition steps.