Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors
Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors
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用于灵敏室温微波探测器的半金属半导体整流器
DOI：
10.1063/1.2112201
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发表时间：
2005
影响因子：
4
通讯作者：
A. Gossard
中科院分区：
文献类型：
--
作者：
A. Young;J. Zimmerman;E. Brown;A. Gossard
与传统的金属-半导体（即，肖特基）结，ErAs：InAlGaAs异质结最近已被证明通过调节肖特基势垒高度和差分电阻来提供高度“可工程化”的电整流特性，同时保持肖特基二极管以其而闻名的非常低的比电容。我们证明，这些新的整流器可以有效地工作在零偏置，可以在微波频率非常敏感。我们报告了在8.0 KHz带宽下3.1 GHz时的切向灵敏度为− 63 dBm，对应于8.9×10− 13 W scinHz 1 scin 2的噪声等效功率（NEP）。我们将此噪声性能归因于高射频至直流电流响应度（108 A scinW）、零偏置操作和噪声源减少。新的二极管被发现是19 dB以上的灵敏度比最好的惠普零偏置二极管在可比的频率。
In contrast to traditional metal-semiconductor (i.e., Schottky) junctions, ErAs:InAlGaAs heterojunctions have recently been shown to provide highly “engineerable” electrical rectification characteristics through the tuning of the Schottky barrier height and differential resistance, while maintaining the very low specific capacitance for which Schottky diodes are famous. We demonstrate that these new rectifiers can operate effectively at zero bias and can be extremely sensitive at microwave frequencies. We report a tangential sensitivity of −63dBm at 3.1 GHz in an 8.0 KHz bandwidth, corresponding to a noise-equivalent power (NEP) of 8.9×10−13W∕Hz1∕2. We attribute this noise performance to the high rf-to-dc current responsivity (∼8A∕W), zero bias operation, and noise source reduction. The new diodes are found to be ∼19dB more sensitive than the best available Hewlett–Packard zero-bias diodes at comparable frequencies.