Thickness dependence and magnetization behavior of Mn-doped GeTe phase change materials
Thickness dependence and magnetization behavior of Mn-doped GeTe phase change materials
复制标题
DOI：
10.1007/s10854-015-3052-x
复制
发表时间：
2015-04
期刊：
影响因子：
--
通讯作者：
A. Adam;Xiaomin Cheng;X. Miao
中科院分区：
文献类型：
--
作者：
A. Adam;Xiaomin Cheng;X. Miao
本文研究了掺锰GeTe相变磁性薄膜的微结构、磁学和电学性能与厚度的关系。X射线衍射图表明，不同厚度的薄膜为非晶态，而退火态的薄膜为多晶态。晶体结构研究表明，随着厚度的增加，主取向增强。计算了掺锰GeTe薄膜的晶格参数随厚度的变化关系。随着薄膜厚度的增加，晶粒尺寸增大，半高全宽、平面间距和晶格应变减小。所有薄膜的磁化强度与温度的关系表明，最大磁化强度出现在最低温度。场冷磁化数据分析结果表明，对于厚度分别为60、120和200 nm的薄膜，掺锰GeTe薄膜在Tc=0.48、0.97和1.10nK时具有铁磁有序。结果表明，当薄膜厚度从60 nm增加到200 nm时，薄膜的电阻率从12.6umΩ/cm下降到0.863µm/cm。
In this paper, the thickness dependences of microstructural, magnetic and electrical properties of Mn-doped GeTe phase change magnetic thin films were studied. The X-ray diffraction patterns demonstrate that the as-deposited films with difference thickness are amorphous while the annealed films are polycrystalline. The crystallographic structure investigation shows that the dominant orientation is enhanced with increasing thickness. The lattice parameters of Mn-doped GeTe thin films as function of the thickness were calculated. The grain sizes increase with the films thickness while the full width at half maximum, plane distance and the lattice strain decrease. The temperature dependences of magnetizations of all the films show that the maximum magnetization values occur at the lowest temperature. The data analysis results of the field cooling magnetization showed that Mn-doped GeTe films have the ferromagnetic ordering at TC= 48, 97 and 110 K for film with thickness 60, 120 and 200 nm respectively. It was found that the resistivity decreases from 12.6 to 0.863 mΩ cm as the film thickness increases from 60 to 200 nm.