Reduction of depth variation in an Si etching process by applying an optimized run-to-run control system
Reduction of depth variation in an Si etching process by applying an optimized run-to-run control system
复制标题
通过应用优化的运行控制系统来减少硅蚀刻工艺中的深度变化
DOI：
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发表时间：
2005
影响因子：
2.7
通讯作者：
K. Imaoka
中科院分区：
文献类型：
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作者：
K. Miwa;T. Inokuchi;T. Takahashi;A. Oikawa;K. Imaoka
为了获得硅器件更稳定的电性能，需要减少浅沟槽隔离工艺中的深度变化。通过将优化的运行控制系统应用于硅沟槽蚀刻工艺，减少了工艺的沟槽深度变化。通过对照，产品晶圆的沟槽深度Cp/Cpk从1.10/0.83改善至1.39/1.34。
A reduction of depth variation in a shallow trench isolation process is desired for obtaining more stable electrical performances of silicon devices. By applying an optimized run-to-run control system to a silicon trench etching process, trench depth variation of the process was reduced. Cp/Cpk of the trench depth of product wafers were improved from 1.10/0.83 to 1.39/1.34 by the control.