Determination of Trace Amounts of Boron in Silicon and Germanium by Curcumin Spectrophotometry after Methyl Borate Distillation
Determination of Trace Amounts of Boron in Silicon and Germanium by Curcumin Spectrophotometry after Methyl Borate Distillation
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DOI：
10.2116/bunsekikagaku.58.373
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发表时间：
2009-05-01
期刊：
影响因子：
0.2
通讯作者：
Wagatsuma, Kazuaki
中科院分区：
文献类型：
--
作者：
Ishikuro, Mikio;Wagatsuma, Kazuaki
建立了一种高灵敏度、高精度的测定硅、锗半导体材料中痕量硼的分析方法。硅用氢氟酸和硝酸的混合物溶解，而锗用王水溶解。为了防止硼通过在氢氟酸中加热而蒸发，向溶液中加入磷酸和硫酸。在样品溶液通过加热彻底脱水后，硅以SiF（4）的形式蒸发;然而，锗以白色沉淀（GeO（2））的形式保留。在脱水后的样品溶液中加入甲醇，加热，硼以硼酸甲酯的形式从样品溶液中分离出来。用氢氧化钠溶液吸收硼酸甲酯，用姜黄素分光光度法测定硼。蒸馏后的回收率几乎为100%的硅和锗。硼在硅和锗中的检出限为0.1 ppm。
A high-sensitivity, high-precision analytical method was developed to determine trace amounts of boron in silicon or germanium semiconductor materials. Silicon was dissolved with a mixture of hydrofluoric acid and nitric acid, while germanium was dissolved with aqua regia. In order to prevent boron from being vaporized by heating in hydrofluoric acid, phosphoric acid and sulfuric acid were added to the solution. After the sample solution was thoroughly dehydrated by heating, silicon was vaporized as SiF(4); however, germanium remained as a white precipitate (GeO(2)). By the addition of methyl alcohol to the dehydrated sample solution and subsequently heating it, boron Could be separated as methyl borate from the sample Solution. The resulting methyl borate was absorbed in a sodium hydroxide solution, and then boron was determined by a curcumin spectrophotometric method. The recoveries of boron after distillation were almost 100% in both silicon and germanium. The detection limit of boron was 0.1 ppm in silicon and germanium.