New Low‐Loss Microwave Dielectric Material ZnTiNbTaO8
New Low‐Loss Microwave Dielectric Material ZnTiNbTaO8
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DOI：
10.1111/j.1551-2916.2011.04815.x
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发表时间：
2011-10
影响因子：
3.9
通讯作者：
Q. Liao;Lingxia Li;X. Ren;Xiang Ding
中科院分区：
文献类型：
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作者：
Q. Liao;Lingxia Li;X. Ren;Xiang Ding
首次研究了一种新型低损耗、低温烧结微波介质材料ZnTiNbTaO_8。采用传统的固相法制备了单相ZnTiNbTaO 8，并在1120°C ~ 1200°C烧结6 h。理论密度，包装分数，键价，和氧八面体畸变进行了计算。在1140°C烧结6 h后，ZnTiNbTaO 8材料具有优良的微波介电性能，e = 36.3，Qf = 67 000 GHz，τf =−57.66 × 10−6/°C。
A new low-loss, low-temperature sinterable microwave dielectric material ZnTiNbTaO8 was investigated for the first time. Single phase ZnTiNbTaO8 was obtained by the conventional solid-state route and sintered at 1120°C–1200°C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of e = 36.3, Qf = 67 000 GHz, τf =−57.66 × 10−6/°C were obtained from the new ZnTiNbTaO8 materials sintered at 1140°C for 6 h.