Tolerance against conducting filament formation in nanosheet-derived titania thin films
Tolerance against conducting filament formation in nanosheet-derived titania thin films
复制标题
DOI：
10.1088/2632-959x/ab9024
复制
发表时间：
2020-05
期刊：
影响因子：
3
通讯作者：
Masaya Sato;M. Hara;Asami Funatsu;R. Nouchi
中科院分区：
文献类型：
--
作者：
Masaya Sato;M. Hara;Asami Funatsu;R. Nouchi
在此，通过基于二氧化钛纳米片胶体悬浮液的真空过滤的简便液相方法制备二氧化钛薄膜，然后进行热退火以将纳米片薄膜转化为锐钛矿型TiO2。纳米片衍生的二氧化钛薄膜表现出较差的界面型机制电阻切换。这种行为与用其他传统技术制造的二氧化钛薄膜观察到的丝状开关不同。这种对导电丝形成的耐受性可能归因于纳米片衍生薄膜中的低浓度氧空位，这是预期的，因为二氧化钛(Ti0.87O2)纳米片的O/Ti比大于TiO2的O/Ti比。此外，发现纳米片衍生薄膜的介电击穿强度与通过其他技术制造的二氧化钛薄膜相当或更高。这些发现清楚地表明了纳米片衍生的二氧化钛薄膜在介电应用中的有用性。
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2. Nanosheet-derived titania thin films exhibit poor resistive switching with an interface-type mechanism. This behaviour is distinct from the filamentary switching that has been observed with titania thin films fabricated by other conventional techniques. This tolerance against conducting-filament formation may be ascribed to a low concentration of oxygen vacancies in nanosheet-derived films, which is expected because of the O/Ti ratio of titania (Ti0.87O2) nanosheets being larger than that of TiO2. Besides, the dielectric breakdown strength of nanosheet-derived films is found to be comparable to or higher than that of titania thin films fabricated by other techniques. These findings clearly indicate the usefulness of nanosheet-derived titania thin films for dielectric applications.