Effect of carbon incorporation on electrical properties of n-type GaN surfaces
Effect of carbon incorporation on electrical properties of n-type GaN surfaces
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DOI：
10.1063/1.3056395
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发表时间：
2009-01
影响因子：
3.2
通讯作者：
Takeshi Kimura;T. Hashizume
中科院分区：
文献类型：
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作者：
Takeshi Kimura;T. Hashizume
为了研究非故意碳掺杂对n型GaN表面电学性质的影响，我们通过对SiNx/CNx/GaN结构进行高温热处理，有意地在n-GaN中掺入了碳。X射线光电子能谱结果表明，在高温退火过程中，即使存在SiNx层，Ga原子也从GaN表面向外扩散。电流-电压特性表明，在含碳样品中肖特基二极管的正反向电流急剧增加。在150~300K温度范围内，碳掺杂样品的正向和反向电流-电压曲线几乎完全可以通过假定浅施主样品表面的指数衰减分布来再现。
We intentionally incorporated carbon into n-GaN by high-temperature annealing of a SiNx/CNx/GaN structure to study the effect of unintentional carbon incorporation on the electrical properties of n-type GaN surfaces. X-ray photoelectron spectroscopy results showed outdiffusion of Ga atoms from the GaN surface during high-temperature annealing even when the SiNx layer was present. The current-voltage characteristics showed a drastic increase in current in the forward and reverse directions of the Schottky diode in the carbon-incorporated sample. They also showed no temperature dependence from 150 to 300 K. The current-voltage curves of the carbon-incorporated samples in the forward and reverse directions could be almost completely reproduced by assuming an exponentially decaying distribution from the surface for shallow donors.