Electronic structure and charge transport properties of amorphous Ta2O5 films
Electronic structure and charge transport properties of amorphous Ta2O5 films
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DOI：
10.1016/j.jnoncrysol.2007.12.013
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发表时间：
2008-05-15
影响因子：
3.5
通讯作者：
Wong, H.
中科院分区：
文献类型：
--
作者：
Shvets, V. A.;Aliev, V. Sh.;Wong, H.
采用反应离子束溅射Ta在硅衬底上沉积非晶Ta 2 O 5薄膜。对薄膜的电子能量损失谱测量发现，等离子体振荡能量为23.1 eV。在1.9-4.9 eV的光谱范围内用椭圆偏振光谱法测量折射率和消光系数。发现光学带隙为4.2 +/- 0.05 eV。价带由三个被离子能隙隔开的带组成。通过密度泛函量子化学计算估计了电子有效质量的值。还进行了从硅向氧化物注入少数载流子的实验，我们发现传导电流的电子分量受非晶Ta 2 O 5中的电子电流的支配，（C）2008 Elsevier B. V.保留所有权利。
Amorphous Ta2O5 films were deposited by sputtering Ta onto silicon substrates with reactive ion beam. Electron energy loss spectroscopy measurements on the film found that the plasma oscillation energy is 23.1 eV. The refractive index and the extinction coefficient were measured with spectroscopic ellipsometry over the spectral range of 1.9-4.9 eV. The optical band gap is found to be 4.2 +/- 0.05 eV. The valence band consists of three bands separated by ionic gaps. The values of electron effective masses were estimated with DFT quantum-chemical calculation. Experiments on injection of minority carriers from silicon into oxide were also conducted and we found that the electron component of conduction current governed by the electron current in the amorphous Ta2O5, (C) 2008 Elsevier B.V. All rights reserved.