Wet etching fabrication of photonic quantum ring laser
Wet etching fabrication of photonic quantum ring laser
复制标题
光子量子环激光器的湿法刻蚀制造
DOI：
10.1063/1.1786346
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发表时间：
2004
影响因子：
3.2
通讯作者：
O. Kwon
中科院分区：
文献类型：
--
作者：
Moojin Kim;D. Kim;Seongeun Lee;O. Kwon
我们提出了一种湿法刻蚀工艺来制作良好的垂直梅萨结构，导致高品质（Q）因子高达2×104，重要的光滑侧壁腔，如光子量子环（PQR）激光器。Q因子分析还表明，它可以得到改善，一旦从晶片材料的内部散射最小化。我们采用体积比为3：1：1的H_3PO_4：CH_3OH：H_2O_2腐蚀液和单层光刻胶掩模对PQR激光器的GaAs ScinAlGaAs结构进行了几微米深的腐蚀。扫描电子显微镜和原子力显微镜研究表明，当刻蚀温度从20 °C到40 °C变化时，刻蚀后的表面粗糙度从4.690 nm减小到0.703 nm。从上述蚀刻过程的活化能分析和温度依赖性，蚀刻过程被示出为反应限制。用湿法腐蚀工艺制作的有源区直径为10μm的PQR激光器，光谱线宽为0.04nm。三维...
We present a wet etching process to fabricate good vertical mesa structures that result in high quality (Q) factors up to 2×104, important for smooth sidewall cavities such as the photonic quantum ring (PQR) laser. Q factor analyses also indicate that it can be improved much more once the internal scattering from the wafer materials is minimized. We use an etching solution of H3PO4:CH3OH:H2O2 with a volume ratio of 3:1:1, and a single-layer photoresist etch mask for etching GaAs∕AlGaAs structures of the PQR laser several micrometer deep. As the etching temperature is varied from 20to40°C, the etched surface roughness decreases from 4.690to0.703nm according to scanning electron microscope and atomic force microscopy studies. From the activation energy analysis for the above etching process and the temperature dependence, the etching process is shown to be reaction limited. The PQR lasers with an active diameter of 10μm, fabricated by the wet etching process, show the spectral linewidth of 0.04nm. Three-dim...