Deposition of TiN/TiAlN multilayers by plasma-activated EB-PVD: tailored microstructure by jumping beam technology
Deposition of TiN/TiAlN multilayers by plasma-activated EB-PVD: tailored microstructure by jumping beam technology
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DOI：
10.1007/s12598-016-0824-2
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发表时间：
2017-08
期刊：
影响因子：
8.8
通讯作者：
Guo-Yuan Yang;Hui Peng;H. Guo;S. Gong
中科院分区：
文献类型：
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作者：
Guo-Yuan Yang;Hui Peng;H. Guo;S. Gong
在这项工作中，采用等离子体激活电子束物理气相沉积（EB-PVD）来沉积氮化物多层涂层。与传统的镀膜方法不同，多层膜是通过操纵电子束（EB）在两个不同的蒸发源之间以可变频率交替跳跃（跳束技术）来获得的。等离子体激活是由空心阴极等离子体单元产生的。通过定制具有不同调制周期（M1：26.5 nm、M2：80.0 nm、M3：6.0 nm、M4：4.0 nm）的 TiN/TiAlN 多层膜来演示沉积过程。将多层涂层的显微组织和硬度与TiN和TiAlN单层涂层进行了对比研究。当调制周期减小到小于 10 nm（M3、M4）时，涂层（TiN、TiAlN、M1、M2）的柱状结构被玻璃状微结构取代。同时，发生超晶格生长。随着调制周期的减小，硬度和塑性变形抗力（H3/E2、H-硬度和E-弹性模量）均增加。 M4涂层的最大硬度为(49.6±2.7)GPa，最大塑性变形抗力为~0.74GPa。
Plasma-activated electron beam-physical vapor deposition (EB-PVD) was used for depositing nitride multilayer coatings in this work. Different from the conventional coating methods, the multilayers were obtained by manipulating electron beam (EB) to jump between two different evaporation sources alternately with variable frequencies (jumping beam technology). The plasma activation was generated by a hollow cathode plasma unit. The deposition process was demonstrated by means of tailoring TiN/TiAlN multilayers with different modulation periods (M1: 26.5 nm, M2: 80.0 nm, M3: 6.0 nm, M4: 4.0 nm). The microstructure and hardness of the multilayer coatings were comparatively studied with TiN and TiAlN single-layer coatings. The columnar structure of the coatings (TiN, TiAlN, M1, M2) is replaced by a glassy-like microstructure when the modulation period decreases to less than 10 nm (M3, M4). Simultaneously, superlattice growth occurs. With the decrease of modulation period, both the hardness and the plastic deformation resistance (H3/E2,H-hardness andE-elastic modulus) increase. M4 coating exhibits the maximum hardness of (49.6 ± 2.7) GPa and the maximum plastic deformation resistance of ~0.74 GPa.