Polarized Raman spectra in β-Ga2O3 single crystals
Polarized Raman spectra in β-Ga2O3 single crystals
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DOI：
10.1016/j.jcrysgro.2013.12.061
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发表时间：
2014-09-01
影响因子：
1.8
通讯作者：
Honda, T.
中科院分区：
文献类型：
--
作者：
Onuma, T.;Fujioka, S.;Honda, T.
测量了漂浮区生长和边缘限定薄膜生长方法制备的(010)Mg、(100)Si和(001)非故意掺杂的β-Ga2O基片的偏振拉曼光谱。根据偏振选择规则，A(G)和B-g拉曼活性模在光谱中完全分开。据我们所知，这是第一次对β-Ga2O的全极化拉曼光谱进行实验观测。这种结果是由目前衬底的结晶取向和表面平坦度的高度一致性所保证的。(C)2014爱思唯尔B.V.保留所有权利。
Polarized Raman spectra were measured from (010) Mg-doped, (100) Si-doped, and (001) unintentionally doped beta-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. The A(g) and B-g Raman active modes were perfectly separated in the spectra according to the polarization selection rules. To the best of our knowledge, this is the first experimental observation of a complete set of polarized Raman spectra of beta-Ga2O3. The results are ensured by the high uniformity of crystalline orientation and surface flatness of the present substrates. (C) 2014 Elsevier B.V. All rights reserved.