Radiation effects in a CMOS active pixel sensor
Radiation effects in a CMOS active pixel sensor
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DOI：
10.1109/23.903796
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发表时间：
2000-12
影响因子：
1.8
通讯作者：
G. Hopkinson
中科院分区：
文献类型：
--
作者：
G. Hopkinson
用Co60、10 MeV质子和重离子辐照对CMOS有源像素传感器进行了评价。在100/spl度/C退火条件下，总电离剂量引起的暗电流和电源电流的增加导致了永久性位移损伤效应。在质子辐照后，反应性发生了很大的变化，随后进行了退火。讨论了这些反应性变化的机制，但尚未确定一个明确的原因。
A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100/spl deg/C. Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not yet been established.