Synthesis, structure and optical properties of Co-doped MgGa2O4/SiO2 nano-glass-ceramic composites
Synthesis, structure and optical properties of Co-doped MgGa2O4/SiO2 nano-glass-ceramic composites
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Co掺杂MgGa2O4/SiO2纳米微晶玻璃复合材料的合成、结构及光学性能
DOI：
10.1016/j.apsusc.2013.03.141
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发表时间：
2013-07
影响因子：
6.7
通讯作者：
Huaidong Jiang
中科院分区：
文献类型：
--
作者：
Yuanchun Wu;Xinqiang Wang;Fapeng Yu;Huaidong Jiang
采用溶胶-凝胶法合成了组成为(1−y) CoxMg1−xGa2O4-ySiO2(0≤x, y≤1)的共掺杂MgGa2O4/SiO2纳米微晶玻璃复合材料，并通过X射线粉末衍射和透射电子显微镜对其进行了表征。 X 射线光电子能谱用于研究纳米复合材料中阳离子和氧的化学环境随退火温度、钴含量和 SiO2 含量的变化。结果表明，Ga3+和Mg2+离子占据了样品中尖晶石结构的四面体和八面体位点。与ZnGa2O4相比，纳米复合材料的反演参数（四面体位点中Ga3+离子分数的两倍）相对较大，并且该值随着退火温度和二氧化硅浓度的增加而减小，而随着钴的富集而增加。所有Co掺杂样品在~600nm处表现出强烈的吸收峰，这是四面体Co2+的特征。但只有在Co0.3Mg0.7Ga2O4和0.6Co0.6Mg0.4Ga2O4-0.4SiO2复合材料中，观察到八面体Co2+离子在300-500nm处的吸收带特征。 Co0.3Mg0.7Ga2O4纳米晶体的八面体Co2+离子对应的吸收峰强度随着退火温度的降低而增加。
Co-doped MgGa2O4/SiO2nano-glass-ceramic composites with the composition of (1−y) CoxMg1−xGa2O4-ySiO2(0≤x, y≤1) were synthesized by the sol–gel method and characterized by X-ray powder diffraction and transmission electron microscopy. X-ray photoelectron spectroscopy was used to study the chemical environments of cations and oxygen in the nanocomposites as a function of annealing temperature, cobalt content and SiO2content. The results show that Ga3+and Mg2+ions occupy both the tetrahedral and octahedral sites of spinel structure in the samples. The inversion parameter (two times the fraction of Ga3+ions in the tetrahedral sites) of the nanocomposites is relatively larger in comparison with that of ZnGa2O4, and the value decreases with the increase of annealing temperature and silica concentration, while increases with cobalt-enrichment. All the Co-doped samples exhibit the intense absorption peak at ~600nm, which is characteristic of tetrahedral Co2+. But only in the composites of Co0.3Mg0.7Ga2O4and 0.6Co0.6Mg0.4Ga2O4-0.4SiO2, the absorption band at 300–500nm characteristic of octahedral Co2+ions is observed. The intensity of the absorption peak corresponding to octahedral Co2+ions increases with decreasing annealing temperature for the Co0.3Mg0.7Ga2O4nanocrystals.
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