Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing
Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing
复制标题
DOI：
10.1016/j.electacta.2018.03.184
复制
发表时间：
2018-05-01
影响因子：
6.6
通讯作者：
Yamamura, Kazuya
中科院分区：
文献类型：
--
作者：
Yang, Xu;Sun, Rongyan;Yamamura, Kazuya
为了实现SiC的高质量、高效率抛光，研究了SiC的阳极氧化机理，为电化学机械抛光（ECMP）的应用奠定了基础。通过线性扫描伏安法（LSV）和阳极氧化实验，发现被加工表面上的蚀坑是在阳极氧化过程中发生击穿的部位氧化产生的。通过原子力显微镜（AFM）观察氧化过程中SiC衬底上相同区域的腐蚀坑，研究了腐蚀坑的起源，证实它们是化学机械抛光（CMP）过程中机械引入的原子级腐蚀坑。采用Deal-Grove模型模拟了腐蚀坑的生长过程。结果表明，在生长初期，它们的生长受电荷转移过程控制，在生长后期，电荷转移过程转变为扩散过程。研究结果为采用电化学机械加工获得原子级光滑的SiC表面提供了参考。(C)2018爱思唯尔有限公司版权所有
In an attempt to realize the high-quality and highly efficient polishing of SiC, the anodic oxidation mechanism of SiC was studied to enable the application of electrochemical mechanical polishing (ECMP). Through linear scanning voltammetry (LSV) and anodic oxidation experiments, the etch pits on the processed surface were found to be generated by oxidation on the sites where breakdown occurs in the anodic oxidation process. The origin of the etch pits was investigated through observing the same area on a SiC substrate during the oxidation process using atomic force microscopy (AFM), and they were confirmed to be atomic-scale pits mechanically introduced in the chemical mechanical polishing (CMP) process. The Deal-Grove model was used to model the growth process of the etch pits. It was found that their growth is controlled by a charge transfer process in the initial growth stage, which changes to a diffusion process in the late growth stage. The results of this research provide a reference for obtaining atomically smooth SiC surfaces by applying ECMP. (C) 2018 Elsevier Ltd. All rights reserved.