Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor
Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor
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DOI：
10.1016/j.jcrysgro.2014.07.006
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发表时间：
2014-10-15
影响因子：
1.8
通讯作者：
Chen, Caixia
中科院分区：
文献类型：
--
作者：
Ni, Haoyin;Lu, Shijie;Chen, Caixia
西门子CVD反应器是生产多晶硅的重要化工设备。反应器中涉及的化学和物理现象非常复杂。了解多组分热流体传输及其与气体/表面反应的相互作用对于反应器的优化设计和操作至关重要。本文建立了描述工业CVD反应器中外延生长过程的流体动力学、传热传质和反应动力学的数学模型。一个修改的反应动力学模型被用来代表气相和表面反应。利用已发表的实验数据，在与工业CVD硅生产工艺相似的温度范围内，对动力学模型进行了验证。使用商业计算流体动力学（CFD）软件ANSYS FLUENT模拟了硅在西门子反应器中的外延生长。对反应器内气体速度、温度和组分浓度的分布进行了数值预测。基于数值模拟结果，对影响工业CVD反应器生长速率的关键因素进行了敏感性分析。模拟结果表明，在加热功率固定的条件下，当棒径为50 mm、80 mm和100 mm时，表面温度较高，气体温度较低，硅的生长速率取决于气体组分的输运。当棒直径增加到80 mm时，平均表面温度降低到1361 K，表面反应速率和气体组分输运共同控制Si的生长速率。当棒直径为100 mm时，表面温度进一步降低，表面反应速率成为Si沉积速率的控制因素。(C)© 2014 Elsevier B. V.保留所有权利。
Siemens CVD reactor is an important chemical device for the production of polysilicon. The chemical and physical phenomenon involved in the reactor is very complex. Understanding the multispecies thermal fluid transport and its interaction with the gas/surface reactions is crucial for an optimal design and operation of the reactor. In the present paper, a mathematical model was constructed to describe the fluid dynamics, the heat and mass transfer and the reaction kinetics of the epitaxial growth process in industrial CVD reactors. A modified reaction kinetics model was used to represent the gas phase and surface reactions. The kinetics model was validated using the published experimental data obtained in a temperature range similar to the industrial CVD processes of silicon productions. The epitaxial growth of silicon in a Siemens reactor was simulated using commercial Computational Fluid Dynamics (CFD) software ANSYS FLUENT. The distributions of gas velocity, temperature and species concentrations in the reactor were predicted numerically. Based on the numerical simulation results, a sensitivity analysis was carried out to determine the key factors influencing the growth rate in industrial CVD reactors. Under the conditions of fixed heating power applied to three different rod diameters of 50 mm, 80 mm and 100 mm, the simulated results show, when the rods diameter is 50 mm, the surface temperature is high and the gas temperature is low, the growth rate of silicon is determined by the transport of gas species. When the rods' diameter increases to 80 mm, the averaged surface temperature decreases to 1361 K, the surface reaction rate and transport of gas species control the growth rate of Si together. When the rods' diameter is 100 mm, the surface temperature decreases further, the rates of surface reactions become the control factor of deposition rate of Si. (C) 2014 Elsevier B.V. All rights reserved.