Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency
Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency
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DOI：
10.1155/2016/4370345
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发表时间：
2016-02
期刊：
影响因子：
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通讯作者：
P. Panda;S. Padhi;G. Dash
中科院分区：
文献类型：
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作者：
P. Panda;S. Padhi;G. Dash
用计算机模拟方法研究了GaN、SiC和Si作为微波源在0.35太赫兹(THz)附近的亚毫米波(亚毫米波)混合隧道雪崩渡越时间模式中的应用潜力。重点介绍了选择宽度、掺杂浓度和面积的设计标准。从模拟结果可以看出，硅二极管的输出功率最小，为41 mW，其次是GaN二极管，输出功率为760 mW，而SiC二极管的输出功率为2.89 W。此外，GaN二极管的噪声比SiC二极管(高5分贝)和Si二极管(高10分贝)都要高。GaN和碳化硅二极管性能的显著差异归因于GaN中引入了不同的载流子速度，这是其他作者没有使用的。尽管与碳化硅二极管相比，GaN具有低功耗和高噪声的特点，但在均方噪声电压曲线上存在几个峰值，在噪声测量曲线上存在几个极小值，这将为设计能够像DAR二极管一样多频调谐的GaN低噪声ATT二极管开辟一个新的方向。
The potentials of GaN, SiC, and Si for application as microwave sources in mixed tunnelling avalanche transit time mode operation at submillimetre wave (sub-mm wave) frequency around 0.35 terahertz (THz) are investigated using some computer simulation methods. Design criteria to choose width, doping concentration, and area are highlighted. From the results of our simulation we observed that the Si diode produces the least power output of 41 mW followed by the GaN diode with 760 mW and the SiC diode with 2.89 W. In addition, the GaN diode has more noise than the SiC diode (by 5 dB) as well as the Si diode (by 10 dB). The drastically different performance between the GaN and the SiC diode is attributed to the incorporation of disparate carrier velocity in GaN which were not being used by other authors. In spite of the low power and high noise of the GaN compared to the SiC diode, the presence of several peaks in the mean square noise voltage curves and the existence of several minima in the noise measure curves would open a new direction in the design of GaN low-noise ATT diodes capable of multifrequency tuning like a DAR diode.