Hydrogen Trapping and Transport in Carbon
Hydrogen Trapping and Transport in Carbon
复制标题
碳中的氢捕获和传输
DOI：
10.1016/0022-3115(89)90264-x
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发表时间：
1989
影响因子：
3.1
通讯作者：
W. Möller
中科院分区：
文献类型：
--
作者：
W. Möller
本文综述了与氢同位素注入石墨层和碳化层有关的现象，特别是注入层，即注入原子沉积的深度范围。对不同改性的石墨层和碳化层的结构进行了表征，并讨论了辐射损伤的影响。最近的证据表明，氢气和甲烷分子的局部形成以及这些分子在块体中的扩散。在氢离子注入过程中形成的“饱和层”由离子沉积和捕获、热或离子诱导的脱陷以及局部复合和分子扩散之间的动态平衡来模拟。相应的计算得到了令人满意的符合单能注入和热渗流实验，饱和层中的库存只占聚变机碳壁的总氢库存的一小部分。一些循环现象可以用植入层的物理原理来解释，而另一些现象，如壁泵，则需要不同的机制来解释。
The present paper reviews phenomena associated with the implantation of hydrogen isotopes into graphite and carbonized layers, with particular emphasis on the implanted layer, i.e. the depth range where the injected atoms are deposited. Different modifications of graphite and carbonaceous layers are characterized with respect to their structure, and the influence of radiation damage is treated. Recent evidence is demonstrated for the occurrence of local hydrogen and methane molecule formation, and the diffusion of these molecules through the bulk.The ‘saturated layer’ formed during hydrogen implantation is modelled by a dynamic balance between ion deposition and trapping, thermal or ion-induced detrapping, and local recombination and molecular diffusion. Corresponding calculations yield satisfactory fits to monoenergetic implantation and thermal effusion experiments.The inventory in the saturated layer is only a small contribution to the total hydrogen inventory of carbon walls in fusion machines. Some recycling phenomena can be explained by the physics of the implanted layer, whereas others, like wall pumping, require different mechanisms for their explanation.