Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates
Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates
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玻璃基板上非晶硅闪光灯退火形成高度均匀微米级厚的多晶硅薄膜
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发表时间：
2007
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通讯作者：
H. Matsumura
中科院分区：
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作者：
K. Ohdaira;Y. Endo;Tomoko Fujiwara;S. Nishizaki;H. Matsumura
非晶硅(a-Si)薄膜在玻璃衬底上无热损伤，采用闪光灯退火法(FLA)制备了厚度为4.5µm的多晶硅(Poly-Si)薄膜。A-Si薄膜是在320℃下用催化化学气相沉积(Cat-CVD)沉积的，因为Cat-CVD a-Si薄膜中的氢含量低到3at。%，它们在不经过任何脱氢处理的情况下很容易转化为多晶硅。将60 nm厚的铬(Cr)薄膜涂覆在玻璃基板上，以实现多晶硅形成的高面积均匀性。二次离子质谱仪(SIMS)表明，在多晶硅薄膜中没有检测到扩散的铬原子，晶化不是众所周知的金属诱导晶化。多晶硅薄膜的拉曼光谱显示出接近1的高结晶度，光致发光(PL)光谱显示出明显的带间跃迁，表明Cat-CVD a-Si的FLA形成了器件级的多晶硅。
Polycrystalline silicon (poly-Si) films as thick as 4.5 µm are prepared by flash lamp annealing (FLA) of amorphous silicon (a-Si) films without thermal damage onto glass substrates. The a-Si films are deposited by catalytic chemical vapor deposition (Cat-CVD) at 320 °C. Since the hydrogen content in Cat-CVD a-Si films is as low as 3 at. %, they are easily converted to poly-Si without any dehydrogenation treatment. Chromium (Cr) films 60 nm thick are coated onto glass substrates to achieve high area uniformity of poly-Si formation. Secondary ion mass spectroscopy (SIMS) reveals that no diffused Cr atoms are detected inside poly-Si films and that crystallization is not the well-known metal-induced crystallization. Raman spectra from the poly-Si films show high crystallinity close to 1, and the photoluminescence (PL) spectrum demonstrates clear band-to-band transition, indicating the formation of device-quality poly-Si by FLA of Cat-CVD a-Si.