Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature
Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature
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DOI：
10.1021/nl403204k
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发表时间：
2014-01-01
期刊：
影响因子：
10.8
通讯作者：
Hiramoto, Toshiro
中科院分区：
文献类型：
--
作者：
Lee, Sejoon;Lee, Youngmin;Hiramoto, Toshiro
在室温条件下，在硅量子点器件中实现了单电子多量子能级输运。从极小的椭球形Si量子点获得了三倍以上无所不在的热能的能量间距，通过构建栅全环结构获得了高电荷稳定性。这些特性可能使我们更接近实际。量子器件在高温下的应用。对输运行为和量子结构进行了深入的分析。
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical. applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.