Influence of ion bombardment on structure and properties of unbalanced magnetron grown CrNx coatings
Influence of ion bombardment on structure and properties of unbalanced magnetron grown CrNx coatings
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DOI：
10.1016/s0257-8972(99)00031-6
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发表时间：
1999-04-21
影响因子：
5.4
通讯作者：
Münz, WD
中科院分区：
文献类型：
--
作者：
Hurkmans, T;Lewis, DB;Münz, WD
衬底偏置电压和衬底偏置电流密度的变化会影响反应非平衡磁控溅射CrNx的结构和性能。在浮置电位（U-f = -25 V）下，CrN的晶格常数与体相值一致，压应力接近0 GPa。当负偏压增加到-200 V时，晶格参数急剧增加，在U-b = -200 V时，本征应力增加到1GPa μ m（-1）。在低于U-b = -50 V的偏置电压下，（111）取向占主导地位。偏置电流密度的增加也导致晶格参数和内应力从0.9mA cm（-2）的零增加到4.4mA cm（-2）的1.1GPa μ m（-1），增加离子轰击使涂层致密化，这可以从硬度从0.9 mA cm（-2）时的HV 2120增加到4.4时的HV 2440观察到。mA cm（-2）。离子能量偏压对硬度的影响明显大于离子流对硬度的影响（偏置电流密度）：在U-b = 0 V时，观察到HV 1300的硬度值，而在U-b = 0 V时，观察到HV 2200的硬度值。平行地，随着偏置电压水平的增加，组合物下降到较低的氮含量，但或多或少与偏置电流密度无关。(C)1999年Elsevier Science S.A. All rights reserved.
The structures and properties of reactive unbalanced magnetron sputtered CrNx can be influenced by variation of the substrate bias voltage and substrate bias current density. At floating potential (U-f = -25 V) the lattice parameter coincides with that of the bulk value for CrN and the compressive stress approaches almost 0 GPa. Increasing the negative bias voltage to -200 V results in a steep increase of the lattice parameter together with an observed increase in the intrinsic stress to 1GPa mu m(-1) at U-b = -200 V. In parallel a change in the texture was observed. At bias voltages below U-b = -50 V the (111) orientation is dominating. whereas at higher bias voltages (220) becomes the major texture.Increasing the bias current density leads also to an increase in the lattice parameter and internal stress from zero at a bias current density of 0.9 mA cm(-2) to 1.1 GPa mu m(-1) at a bias current density of 4.4 mA cm (-2), Increasing ion bombardment densifies the coatings as can be observed from the hardness increase of HV2120 at 0.9 mA cm(-2) to HV2440 at 4.4. mA cm (-2) at a bias voltage level of U-b = - 100 V. The ion energy (bias voltage) obviously influences the hardness more than does the ion flux (bias current density): At U-b = 0 V a hardness value of HV1300 was observed in contrast to HV2200 at U-b = -200 V. In parallel the composition declines to lower nitrogen contents with increasing bias voltage levels, but is more or less independent of the bias current density. (C) 1999 Elsevier Science S.A. All rights reserved.