The future of power semiconductor device technology
The future of power semiconductor device technology
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DOI：
10.1109/5.931471
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发表时间：
2001-06-01
影响因子：
20.6
通讯作者：
Baliga, BJ
中科院分区：
文献类型：
--
作者：
Baliga, BJ
在过去的十年中，电力电子系统从功率分立器件的革命性进步中受益匪浅。20世纪70年代引入的功率金属氧化物半导体场效应晶体管（mosfet）和20世纪80年代引入的绝缘栅双极晶体管（igbt），由于这些结构的高输入阻抗大大增强了功率增益，使得设计非常紧凑的高效系统成为可能。最近，通过使用具有电荷耦合区域的创新垂直结构，硅功率mosfet的性能得到了显着改善。同时，硅igbt继续在中高压应用领域占据主导地位，这是由于其额定电压的缩放以及通过使用超大规模集成电路（VLSI）技术和沟槽栅极区域实现的栅极结构的改进。对各种mos门控晶闸管进行了研究，在导通功率损耗、开关功率损耗和安全工作区域之间的权衡方面取得了一些有希望的改进。功率整流器的同步改进已经在低压额定值下实现，使用含有沟槽的肖特基整流器结构，在高压额定值下使用结合结和肖特基势垒触点的结构。从长远来看，碳化硅肖特基整流器和功率mosfet的性能至少提高了10倍。虽然预期的性能增强已经通过实验证明，但目前该技术商业化的速度取决于缺陷密度和原材料的成本。
Power electronic systems have benefited greatly during the past ten years from the revolutionary advances that have occurred in power discrete devices. The introduction of power metal-oxide-semiconductor field-effect transistors (MOSFETs) in the 1970s and the insulated gate bipolar transistors (IGBTs) in the 1980s enabled design of very compact high-efficiency systems due to the greatly enhanced power gain resulting from the high input impedance of these structures. Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions. Meanwhile, silicon IGBTs continue to dominate the medium- and high-voltage application space due to scaling of their voltage ratings and refinements to their gate structure achieved by using very large scale integration (VLSI) technology and trench gate regions. Research on a variety of MOS-gated thyristors has also been conducted, resulting in some promising improvements in the tradeoff between on-state power loss, switching power loss, and the safe-operating-area. Concurrent improvements in power rectifiers have been achieved at low-voltage ratings using Schottky rectifier structures containing trenches and at high-voltage ratings using structures that combine junction and Schottky barrier contacts. On the longer term, silicon carbide Schottky rectifiers and power MOSFETs offer at least another tenfold improvement in performance. Although the projected performance enhancements have been experimentally demonstrated, the defect density and cost of the starting material are determining the pace of commercialization of this technology at present.