2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications

2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications
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DOI：
10.1109/iciprm.2008.4702974
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发表时间：
2008-05
期刊：
2008 20th International Conference on Indium Phosphide and Related Materials
影响因子：
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通讯作者：
A. Mereuta;V. Iakovlev;A. Caliman;A. Syrbu;A. Rudra;E. Kapon
A. Mereuta;V. Iakovlev;A. Caliman;A. Syrbu;A. Rudra;E. Kapon
中科院分区：
其他
文献类型：
--
作者：
A. Mereuta;V. Iakovlev;A. Caliman;A. Syrbu;A. Rudra;E. Kapon

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我们展示了2妈妈波长，晶片熔融铟镓（铝）砷/InP-AlGaAs/GaAs垂直腔面发射激光器（VCSEL）发射单模功率为0.5毫瓦，在室温下的阈值电流为4毫安和边模抑制比超过30分贝。发射波长可以用电流连续调谐约5 nm而没有模式跳变，调谐速率为0.31nm/mA。这些特性证明了长波长VCSEL在气体传感和其他光谱应用中的潜力。
We demonstrate 2-mum wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4 mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by ~5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.