High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films.
High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films.
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基于多晶甲脒碘化铅钙钛矿薄膜的高性能光电二极管型光电探测器
DOI：
10.1038/s41598-018-29147-6
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发表时间：
2018-07-24
影响因子：
4.6
通讯作者：
Teng F
中科院分区：
文献类型：
--
作者：
Zhang M;Zhang F;Wang Y;Zhu L;Hu Y;Lou Z;Hou Y;Teng F
基于三维有机-无机卤化铅钙钛矿的光电探测器近年来受到了广泛的关注。作为一种新型的光收集材料，甲脒碘化铅（FAPbI3）具有优异的光电性能，甚至超过了甲基碘化铅（MAPbI3）。迄今为止，仅报道了几种基于FAPbI3单晶和多晶薄膜的横向结构的光导体型光电探测器。在这里，我们展示了一种低电压，高综合性能的光电二极管型光电探测器，该探测器基于多晶α-FAPbI3薄膜，通过一步溶液加工方法和后退火处理合成。该光电探测器具有从近紫外到近红外（330 ~ 800 nm）的宽带响应能力，具有8.6 × 104的高通断电流比和7.2/19.5 μs的快速响应时间。该器件的光响应率为0.95 AW−1，比检出率为2.8 × 1012 Jones，在−1.0 V、650 nm光照下的外量子效率（EQE）接近182%。基于多晶α-FAPbI3薄膜的光电二极管型光电探测器具有优异的性能，在未来的光电器件应用中具有很大的前景。
Photodetectors based on three dimensional organic–inorganic lead halide perovskites have recently received significant attention. As a new type of light-harvesting materials, formamidinium lead iodide (FAPbI3) is known to possess excellent optoelectronic properties even exceeding those of methylammonium lead iodide (MAPbI3). To date, only a few photoconductor-type photodetectors based on FAPbI3 single crystals and polycrystalline thin films in a lateral structure have been reported. Here, we demonstrate low-voltage, high-overall-performance photodiode-type photodetectors in a sandwiched geometry based on polycrystalline α-FAPbI3 thin films synthesized by a one-step solution processing method and post-annealing treatment. The photodetectors exhibit a broadband response from the near-ultraviolet to the near-infrared (330–800 nm), achieving a high on/off current ratio of 8.6 × 104 and fast response times of 7.2/19.5 μs. The devices yield a photoresponsivity of 0.95 AW−1 and a high specific detectivity of 2.8 × 1012 Jones with an external quantum efficiency (EQE) approaching 182% at −1.0 V under 650 nm illumination. The photodiode-type photodetectors based on polycrystalline α-FAPbI3 thin films with superior performance consequently show great promise for future optoelectronic device applications.